FDG6306P دیتاشیت

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مشاهده دیتاشیت FDG6306P	دانلود دیتاشیت

RoHS: true
Type: 2 P-Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi FDG6306P
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 300mW
Total Gate Charge (Qg@Vgs): 2nC@4.5V
Input Capacitance (Ciss@Vds): 114pF@10V
Continuous Drain Current (Id): 600mA
Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 420mΩ@600mA,4.5V
Package: SC-70-6
Manufacturer: onsemi
Series: PowerTrench®
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA
Rds On (Max) @ Id, Vgs: 420mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 114pF @ 10V
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88 (SC-70-6)
Base Part Number: FDG6306
detail: Mosfet Array 2 P-Channel (Dual) 20V 600mA 300mW Surface Mount SC-88 (SC-70-6)