FQU8P10TU دیتاشیت

FQU8P10TU

مشخصات دیتاشیت

نام دیتاشیت FQU8P10TU
حجم فایل 70.016 کیلوبایت
نوع فایل pdf
تعداد صفحات 11

مشاهده دیتاشیت FQU8P10TU

دانلود دیتاشیت

سایر مستندات

FQD8T10, FQU8P10 11 pages

مشخصات فنی

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FQU8P10TU
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 2.5W;44W
  • Total Gate Charge (Qg@Vgs): 15nC@10V
  • Drain Source Voltage (Vdss): 100V
  • Input Capacitance (Ciss@Vds): 470pF@25V
  • Continuous Drain Current (Id): 6.6A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 530mΩ@3.3A,10V
  • Package: TO-251-3
  • Manufacturer: onsemi
  • Series: QFET®
  • Packaging: Tube
  • Part Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 530mOhm @ 3.3A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Base Part Number: FQU8
  • detail: P-Channel 100V 6.6A (Tc) 2.5W (Ta), 44W (Tc) Through Hole I-PAK

محصولات مشابه