FQT5P10TF دیتاشیت

FQT5P10TF

مشخصات دیتاشیت

نام دیتاشیت FQT5P10TF
حجم فایل 70.016 کیلوبایت
نوع فایل pdf
تعداد صفحات 10

مشاهده دیتاشیت FQT5P10TF

دانلود دیتاشیت

سایر مستندات

FQT5P10 10 pages

مشخصات فنی

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FQT5P10TF
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 2W
  • Total Gate Charge (Qg@Vgs): 8.2nC@10V
  • Drain Source Voltage (Vdss): 100V
  • Input Capacitance (Ciss@Vds): 250pF@25V
  • Continuous Drain Current (Id): 1A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 1.05Ω@10V,500mA
  • Package: SOT-223-4
  • Manufacturer: onsemi
  • Series: QFET®
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.05Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Tc)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223-4
  • Package / Case: TO-261-4, TO-261AA
  • Base Part Number: FQT5
  • detail: P-Channel 100V 1A (Tc) 2W (Tc) Surface Mount SOT-223-4

محصولات مشابه