NTTFS5826NLTAG دیتاشیت

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مشاهده دیتاشیت NTTFS5826NLTAG-Isee	دانلود دیتاشیت

RoHS: true
Type: N Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi NTTFS5826NLTAG
Operating Temperature: -55°C~+175°C@(Tj)
Power Dissipation (Pd): 3.1W;19W
Total Gate Charge (Qg@Vgs): 25nC@10V
Drain Source Voltage (Vdss): 60V
Input Capacitance (Ciss@Vds): 850pF@25V
Continuous Drain Current (Id): 8A
Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 24mΩ@10V,7.5A
Package: DFN-8(3x3)
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V
FET Feature: -
Power Dissipation (Max): 3.1W (Ta), 19W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: 8-WDFN (3.3x3.3)
Package / Case: 8-PowerWDFN
Base Part Number: NTTFS5
detail: N-Channel 60V 8A (Ta) 3.1W (Ta), 19W (Tc) Surface Mount 8-WDFN (3.3x3.3)