NTLJF3117PT1G دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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NTLJF3117PT1G
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حجم فایل
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102.56
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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8
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مشخصات فنی
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RoHS:
true
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Type:
P Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi NTLJF3117PT1G
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Power Dissipation (Pd):
710mW
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Drain Source Voltage (Vdss):
20V
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Continuous Drain Current (Id):
2.3A
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Gate Threshold Voltage (Vgs(th)@Id):
1V@250uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
100mΩ@4.5V,2A
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Package:
DFN-6(2x2)
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Manufacturer:
onsemi
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Series:
µCool™
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
P-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
20V
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Current - Continuous Drain (Id) @ 25°C:
2.3A (Ta)
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Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
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Rds On (Max) @ Id, Vgs:
100mOhm @ 2A, 4.5V
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Vgs(th) (Max) @ Id:
1V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
6.2nC @ 4.5V
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Vgs (Max):
±8V
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Input Capacitance (Ciss) (Max) @ Vds:
531pF @ 10V
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FET Feature:
Schottky Diode (Isolated)
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Power Dissipation (Max):
710mW (Ta)
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Mounting Type:
Surface Mount
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Supplier Device Package:
6-WDFN (2x2)
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Package / Case:
6-WDFN Exposed Pad
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Base Part Number:
NTLJF31
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detail:
P-Channel 20V 2.3A (Ta) 710mW (Ta) Surface Mount 6-WDFN (2x2)
