NVTJD4001NT1G دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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NVTJD4001NT1G
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حجم فایل
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92.735
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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7
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مشخصات فنی
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RoHS:
true
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Type:
2 N-Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi NVTJD4001NT1G
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
272mW
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Total Gate Charge (Qg@Vgs):
1.3nC@5V
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Drain Source Voltage (Vdss):
30V
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Input Capacitance (Ciss@Vds):
33pF@5V
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Continuous Drain Current (Id):
250mA
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Gate Threshold Voltage (Vgs(th)@Id):
1.5V@100uA
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Reverse Transfer Capacitance (Crss@Vds):
7.25pF@5V
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Drain Source On Resistance (RDS(on)@Vgs,Id):
1.5Ω@2.5V,10mA
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Package:
SOT-323-6
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
2 N-Channel (Dual)
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FET Feature:
Standard
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Drain to Source Voltage (Vdss):
30V
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Current - Continuous Drain (Id) @ 25°C:
250mA
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Rds On (Max) @ Id, Vgs:
1.5Ohm @ 10mA, 4V
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Vgs(th) (Max) @ Id:
1.5V @ 100µA
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Gate Charge (Qg) (Max) @ Vgs:
1.3nC @ 5V
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Input Capacitance (Ciss) (Max) @ Vds:
33pF @ 5V
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Power - Max:
272mW
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Mounting Type:
Surface Mount
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Package / Case:
6-TSSOP, SC-88, SOT-363
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Supplier Device Package:
SC-88/SC70-6/SOT-363
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Base Part Number:
NVTJD40
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detail:
Mosfet Array 2 N-Channel (Dual) 30V 250mA 272mW Surface Mount SC-88/SC70-6/SOT-363
