FDT1600N10ALZ دیتاشیت

FDT1600N10ALZ

مشخصات دیتاشیت

نام دیتاشیت FDT1600N10ALZ
حجم فایل 70.016 کیلوبایت
نوع فایل pdf
تعداد صفحات 12

مشاهده دیتاشیت FDT1600N10ALZ

دانلود دیتاشیت

سایر مستندات

FDT1600N10ALZ 12 pages

مشخصات فنی

  • RoHS: true
  • Type: -
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FDT1600N10ALZ
  • Power Dissipation (Pd): -
  • Total Gate Charge (Qg@Vgs): -
  • Drain Source Voltage (Vdss): -
  • Input Capacitance (Ciss@Vds): -
  • Continuous Drain Current (Id): -
  • Gate Threshold Voltage (Vgs(th)@Id): -
  • Reverse Transfer Capacitance (Crss@Vds): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): -
  • Package: SOT-223
  • Manufacturer: onsemi
  • Series: PowerTrench®
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 160mOhm @ 2.8A, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.77nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 50V
  • FET Feature: -
  • Power Dissipation (Max): 10.42W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223-4
  • Package / Case: TO-261-4, TO-261AA
  • Base Part Number: FDT16
  • detail: N-Channel 100V 5.6A (Tc) 10.42W (Tc) Surface Mount SOT-223-4

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