2SC5569-TD-E دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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2SC5569-TD-E
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حجم فایل
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51.282
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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8
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi 2SC5569-TD-E
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Transistor Type:
NPN
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Operating Temperature:
+150°C@(Tj)
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Collector Current (Ic):
7A
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Power Dissipation (Pd):
1.3W
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Transition Frequency (fT):
290MHz
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DC Current Gain (hFE@Ic,Vce):
200@500mA,2V
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Collector Cut-Off Current (Icbo):
100nA
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Collector-Emitter Breakdown Voltage (Vceo):
50V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
240mV@2A,40mA
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Package:
SOT-89
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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Current - Collector (Ic) (Max):
7A
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Voltage - Collector Emitter Breakdown (Max):
50V
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Vce Saturation (Max) @ Ib, Ic:
240mV @ 175mA, 3.5A
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Current - Collector Cutoff (Max):
100nA (ICBO)
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DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 500mA, 2V
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Power - Max:
1.3W
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Frequency - Transition:
330MHz
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Mounting Type:
Surface Mount
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Package / Case:
TO-243AA
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Supplier Device Package:
SOT-89/PCP-1
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Base Part Number:
2SC5569
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detail:
Bipolar (BJT) Transistor NPN 50V 7A 330MHz 1.3W Surface Mount SOT-89/PCP-1
