NTHS4101PT1G دیتاشیت

NTHS4101PT1G

مشخصات دیتاشیت

نام دیتاشیت NTHS4101PT1G
حجم فایل 102.922 کیلوبایت
نوع فایل pdf
تعداد صفحات 7

مشاهده دیتاشیت NTHS4101PT1G

دانلود دیتاشیت

سایر مستندات

NTHS4101P 7 pages

مشخصات فنی

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi NTHS4101PT1G
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 1.3W
  • Total Gate Charge (Qg@Vgs): 35nC@4.5V
  • Drain Source Voltage (Vdss): 20V
  • Input Capacitance (Ciss@Vds): 2100pF@16V
  • Continuous Drain Current (Id): 4.8A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 34mΩ@4.5V,4.8A
  • Package: SMD-8P
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.8A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 34mOhm @ 4.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 16V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta)
  • Mounting Type: Surface Mount
  • Supplier Device Package: ChipFET™
  • Package / Case: 8-SMD, Flat Lead
  • Base Part Number: NTHS41
  • detail: P-Channel 20V 4.8A (Tj) 1.3W (Ta) Surface Mount ChipFET™

محصولات مشابه