MCH6661-TL-W دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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MCH6661
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حجم فایل
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1048.32
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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5
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مشخصات فنی
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RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi MCH6661-TL-W
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Operating Temperature:
+150°C@(Tj)
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Power Dissipation (Pd):
800mW
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Total Gate Charge (Qg@Vgs):
2nC@10V
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Drain Source Voltage (Vdss):
30V
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Input Capacitance (Ciss@Vds):
88pF@10V
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Continuous Drain Current (Id):
1.8A
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Gate Threshold Voltage (Vgs(th)@Id):
2.6V@1mA
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Reverse Transfer Capacitance (Crss@Vds):
11pF@10V
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Drain Source On Resistance (RDS(on)@Vgs,Id):
145mΩ@10V,900mA
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Package:
SOT-363-6(SC-70-6)
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
2 N-Channel (Dual)
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FET Feature:
Logic Level Gate, 4V Drive
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Drain to Source Voltage (Vdss):
30V
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Current - Continuous Drain (Id) @ 25°C:
1.8A
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Rds On (Max) @ Id, Vgs:
188mOhm @ 900mA, 10V
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Vgs(th) (Max) @ Id:
2.6V @ 1mA
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Gate Charge (Qg) (Max) @ Vgs:
2nC @ 10V
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Input Capacitance (Ciss) (Max) @ Vds:
88pF @ 10V
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Power - Max:
800mW
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Mounting Type:
Surface Mount
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Package / Case:
6-SMD, Flat Leads
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Supplier Device Package:
SC-88FL/MCPH6
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Base Part Number:
MCH66
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detail:
Mosfet Array 2 N-Channel (Dual) 30V 1.8A 800mW Surface Mount SC-88FL/MCPH6
