FQD6N40CTM دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
FQD6N40CTM
|
|
حجم فایل
|
74.44
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
8
|
مشخصات فنی
-
RoHS:
true
-
Type:
N Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
onsemi FQD6N40CTM
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Power Dissipation (Pd):
2.5W;48W
-
Total Gate Charge (Qg@Vgs):
20nC@10V
-
Drain Source Voltage (Vdss):
400V
-
Input Capacitance (Ciss@Vds):
625pF@25V
-
Continuous Drain Current (Id):
4.5A
-
Gate Threshold Voltage (Vgs(th)@Id):
4V@250uA
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
1Ω@10V,2.25A
-
Package:
TO-252
-
Manufacturer:
onsemi
-
Series:
QFET®
-
Packaging:
Cut Tape (CT)
-
Part Status:
Active
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
400V
-
Current - Continuous Drain (Id) @ 25°C:
4.5A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
10V
-
Rds On (Max) @ Id, Vgs:
1Ohm @ 2.25A, 10V
-
Vgs(th) (Max) @ Id:
4V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
20nC @ 10V
-
Vgs (Max):
±30V
-
Input Capacitance (Ciss) (Max) @ Vds:
625pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
2.5W (Ta), 48W (Tc)
-
Mounting Type:
Surface Mount
-
Supplier Device Package:
D-Pak
-
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
-
Base Part Number:
FQD6
-
detail:
N-Channel 400V 4.5A (Tc) 2.5W (Ta), 48W (Tc) Surface Mount D-Pak
