SI4532DY دیتاشیت

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مشاهده دیتاشیت SI4532DY	دانلود دیتاشیت

RoHS: true
Type: 1PCSN-Channel&1PCSP-Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi SI4532DY
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 900mW
Total Gate Charge (Qg@Vgs): 15nC@10V
Drain Source Voltage (Vdss): 30V
Input Capacitance (Ciss@Vds): 235pF@10V
Continuous Drain Current (Id): 3.9A;3.5A
Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 65mΩ@3.9A,10V
Package: SOP-8
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.9A, 3.5A
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 10V
Power - Max: 900mW
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Base Part Number: SI453
detail: Mosfet Array N and P-Channel 30V 3.9A, 3.5A 900mW Surface Mount 8-SOIC