PCP1405-TD-H 数据手册
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技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi PCP1405-TD-H
- Operating Temperature: +150°C@(Tj)
- Power Dissipation (Pd): 3.5W
- Total Gate Charge (Qg@Vgs): 2.1nC@4.5V
- Drain Source Voltage (Vdss): 250V
- Input Capacitance (Ciss@Vds): 140pF@20V
- Continuous Drain Current (Id): 600mA
- Gate Threshold Voltage (Vgs(th)@Id): 1.3V@1mA
- Reverse Transfer Capacitance (Crss@Vds): 3pF@20V
- Drain Source On Resistance (RDS(on)@Vgs,Id): 5Ω@4.5V,300mA
- Package: SOT-89
- Manufacturer: onsemi
- Series: -
- Packaging: Cut Tape (CT)
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 6.5Ohm @ 300mA, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 20V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Tc)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-89/PCP-1
- Package / Case: TO-243AA
- Base Part Number: PCP1405
- detail: N-Channel 250V 600mA (Ta) 3.5W (Tc) Surface Mount SOT-89/PCP-1