FDMB3900AN دیتاشیت

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مشاهده دیتاشیت FDMB3900AN	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi FDMB3900AN
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 800mW
Total Gate Charge (Qg@Vgs): 17nC@10V
Drain Source Voltage (Vdss): 25V
Input Capacitance (Ciss@Vds): 890pF@13V
Continuous Drain Current (Id): 7A
Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 23mΩ@7A,10V
Package: MicroFET-8(3x1.9)
Manufacturer: onsemi
Series: PowerTrench®
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 13V
Power - Max: 800mW
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-MLP, MicroFET (3x1.9)
Base Part Number: FDMB39
detail: Mosfet Array 2 N-Channel (Dual) 25V 7A 800mW Surface Mount 8-MLP, MicroFET (3x1.9)