NTGS3136PT1G دیتاشیت

NTGS3136PT1G

مشخصات دیتاشیت

نام دیتاشیت NTGS3136PT1G
حجم فایل 87.471 کیلوبایت
نوع فایل pdf
تعداد صفحات 7

مشاهده دیتاشیت NTGS3136PT1G

دانلود دیتاشیت

سایر مستندات

NTGS3136P 6 pages

مشخصات فنی

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi NTGS3136PT1G
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 700mW
  • Total Gate Charge (Qg@Vgs): 29nC@4.5V
  • Input Capacitance (Ciss@Vds): 1901pF@10V
  • Continuous Drain Current (Id): 3.7A
  • Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 33mΩ@5.1A,4.5V
  • Package: SOT-23-6
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 33mOhm @ 5.1A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 1901pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-TSOP
  • Package / Case: SOT-23-6
  • Base Part Number: NTGS31
  • detail: P-Channel 20V 3.7A (Ta) 700mW (Ta) Surface Mount 6-TSOP

محصولات مشابه