FQS4901TF دیتاشیت

FQS4901TF

مشخصات دیتاشیت

نام دیتاشیت FQS4901TF
حجم فایل 63.8 کیلوبایت
نوع فایل pdf
تعداد صفحات 8

مشاهده دیتاشیت FQS4901TF

دانلود دیتاشیت

سایر مستندات

FQS4901 10 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FQS4901TF
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 2W
  • Total Gate Charge (Qg@Vgs): 7.5nC@10V
  • Drain Source Voltage (Vdss): 400V
  • Input Capacitance (Ciss@Vds): 210pF@25V
  • Continuous Drain Current (Id): 450mA
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 4.2Ω@10V,3.15A
  • Package: SOP-8
  • Manufacturer: onsemi
  • Series: QFET®
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 450mA
  • Rds On (Max) @ Id, Vgs: 4.2Ohm @ 225mA, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V
  • Power - Max: 2W
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
  • Base Part Number: FQS4
  • detail: Mosfet Array 2 N-Channel (Dual) 400V 450mA 2W Surface Mount 8-SOIC

محصولات مشابه