FDMS86252L دیتاشیت

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مشاهده دیتاشیت FDMS86252L	دانلود دیتاشیت

RoHS: true
Type: N Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi FDMS86252L
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 50W
Total Gate Charge (Qg@Vgs): 15nC@10V
Drain Source Voltage (Vdss): 150V
Input Capacitance (Ciss@Vds): 1.335nF@75V
Continuous Drain Current (Id): 12A
Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
Reverse Transfer Capacitance (Crss@Vds): 3pF@75V
Drain Source On Resistance (RDS(on)@Vgs,Id): 46mΩ@10V,4.4A
Package: Power-56-8
Manufacturer: onsemi
Series: PowerTrench®
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 51mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 905pF @ 75V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: 8-PQFN (5x6)
Package / Case: 8-PowerTDFN
Base Part Number: FDMS86
detail: N-Channel 150V 4.6A (Ta), 16A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount 8-PQFN (5x6)