دیتاشیت IRLS640A
مشخصات دیتاشیت
| نام دیتاشیت |
IRLS640A
|
| حجم فایل |
723.275
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
10
|
مشخصات
-
Manufacturer:
ON Semiconductor
-
Series:
-
-
Packaging:
Tube
-
Part Status:
Active
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
200V
-
Current - Continuous Drain (Id) @ 25°C:
9.8A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
5V
-
Rds On (Max) @ Id, Vgs:
180mOhm @ 4.9A, 5V
-
Vgs(th) (Max) @ Id:
2V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
56nC @ 5V
-
Vgs (Max):
±20V
-
Input Capacitance (Ciss) (Max) @ Vds:
1705pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
40W (Tc)
-
Operating Temperature:
-55°C ~ 150°C (TJ)
-
Mounting Type:
Through Hole
-
Supplier Device Package:
TO-220F
-
Package / Case:
TO-220-3 Full Pack
-
Base Part Number:
IRLS64
-
detail:
N-Channel 200V 9.8A (Tc) 40W (Tc) Through Hole TO-220F
