KSC5603DTU دیتاشیت

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مشاهده دیتاشیت KSC5603DTU	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: onsemi KSC5603DTU
Transistor Type: NPN (Triple Diffused Planar Silicon Transistor)
Operating Temperature: +150°C@(Tj)
Collector Current (Ic): 3A
Power Dissipation (Pd): 100W
Transition Frequency (fT): 5MHz
DC Current Gain (hFE@Ic,Vce): 29@400mA,3V
Collector Cut-Off Current (Icbo): -
Collector-Emitter Breakdown Voltage (Vceo): 800V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1.2V@1A,200mA
Package: TO-220
Manufacturer: onsemi
Series: -
Packaging: Bulk
Part Status: Obsolete
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 800V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 200µA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 400mA, 3V
Power - Max: 100W
Frequency - Transition: 5MHz
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Base Part Number: KSC5603
detail: Bipolar (BJT) Transistor NPN 800V 3A 5MHz 100W Through Hole TO-220-3