MJF18004G دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت MJF18004G	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: onsemi MJF18004G
Transistor Type: NPN
Operating Temperature: -65°C~+150°C@(Tj)
Collector Current (Ic): 5A
Power Dissipation (Pd): 35W
Transition Frequency (fT): 13MHz
DC Current Gain (hFE@Ic,Vce): 14@300mA,5V
Collector Cut-Off Current (Icbo): 100uA
Collector-Emitter Breakdown Voltage (Vceo): 450V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@2.5A,500mA
Package: TO-220F
Manufacturer: onsemi
Series: SWITCHMODE™
Packaging: Tube
Part Status: Obsolete
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 450V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 500mA, 2.5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 300mA, 5V
Power - Max: 35W
Frequency - Transition: 13MHz
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Base Part Number: MJF18
detail: Bipolar (BJT) Transistor NPN 450V 5A 13MHz 35W Through Hole TO-220FP