FCB110N65F دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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FCB110N65F
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حجم فایل
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70.016
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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10
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مشخصات فنی
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RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi FCB110N65F
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
357W
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Total Gate Charge (Qg@Vgs):
145nC@10V
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Drain Source Voltage (Vdss):
650V
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Input Capacitance (Ciss@Vds):
4895pF@100V
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Continuous Drain Current (Id):
35A
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Gate Threshold Voltage (Vgs(th)@Id):
5V@3.5mA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
110mΩ@10V,17.5A
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Package:
TO-263AB
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Manufacturer:
onsemi
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Series:
FRFET®, SuperFET® II
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
650V
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Current - Continuous Drain (Id) @ 25°C:
35A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
110mOhm @ 17.5A, 10V
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Vgs(th) (Max) @ Id:
5V @ 3.5mA
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Gate Charge (Qg) (Max) @ Vgs:
145nC @ 10V
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
4895pF @ 100V
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FET Feature:
-
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Power Dissipation (Max):
357W (Tc)
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Mounting Type:
Surface Mount
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Supplier Device Package:
D²PAK
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Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Base Part Number:
FCB11
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detail:
N-Channel 650V 35A (Tc) 357W (Tc) Surface Mount D²PAK
