دیتاشیت FQPF11P06
مشخصات دیتاشیت
| نام دیتاشیت |
FQPF11P06
|
| حجم فایل |
859.708
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
10
|
مشخصات
-
Manufacturer:
ON Semiconductor
-
Series:
QFET®
-
Packaging:
Tube
-
Part Status:
Active
-
FET Type:
P-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
60V
-
Current - Continuous Drain (Id) @ 25°C:
8.6A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
10V
-
Rds On (Max) @ Id, Vgs:
175mOhm @ 4.3A, 10V
-
Vgs(th) (Max) @ Id:
4V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
17nC @ 10V
-
Vgs (Max):
±25V
-
Input Capacitance (Ciss) (Max) @ Vds:
550pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
30W (Tc)
-
Operating Temperature:
-55°C ~ 175°C (TJ)
-
Mounting Type:
Through Hole
-
Supplier Device Package:
TO-220F
-
Package / Case:
TO-220-3 Full Pack
-
Base Part Number:
FQPF1
-
detail:
P-Channel 60V 8.6A (Tc) 30W (Tc) Through Hole TO-220F
