RFP12N10L دیتاشیت

RFP12N10L

مشخصات دیتاشیت

نام دیتاشیت RFP12N10L
حجم فایل 70.016 کیلوبایت
نوع فایل pdf
تعداد صفحات 8

مشاهده دیتاشیت RFP12N10L

دانلود دیتاشیت

سایر مستندات

TO220B03 Pkg Drawing 1 pages

RFP12N10L 8 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi RFP12N10L
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 60W
  • Total Gate Charge (Qg@Vgs): -
  • Drain Source Voltage (Vdss): 100V
  • Input Capacitance (Ciss@Vds): 900pF@25V
  • Continuous Drain Current (Id): 12A
  • Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
  • Reverse Transfer Capacitance (Crss@Vds): 170pF@25V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 200mΩ@5V,12A
  • Package: TO-220
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Rds On (Max) @ Id, Vgs: 200mOhm @ 12A, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
  • Base Part Number: RFP12
  • detail: N-Channel 100V 12A (Tc) 60W (Tc) Through Hole TO-220-3

محصولات مشابه