FDD86110 دیتاشیت

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مشاهده دیتاشیت FDD86110	دانلود دیتاشیت

RoHS: true
Type: N Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi FDD86110
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 3.1W;127W
Total Gate Charge (Qg@Vgs): 35nC@10V
Drain Source Voltage (Vdss): 100V
Input Capacitance (Ciss@Vds): 2265pF@50V
Continuous Drain Current (Id): 12.5A;50A
Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 10.2mΩ@10V,12.5A
Package: DPAK(TO-252)
Manufacturer: onsemi
Series: PowerTrench®
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2265pF @ 50V
FET Feature: -
Power Dissipation (Max): 3.1W (Ta), 127W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: D-PAK (TO-252)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number: FDD861
detail: N-Channel 100V 12.5A (Ta), 50A (Tc) 3.1W (Ta), 127W (Tc) Surface Mount D-PAK (TO-252)