MMUN2212LT1G دیتاشیت

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دانلود دیتاشیت MMUN2212LT1G	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/Digital Transistors
Datasheet: onsemi MUN2212T1G
Transistor Type: 1 NPN - Pre Biased
Collector Current (Ic): 100mA
Power Dissipation (Pd): 338mW
DC Current Gain (hFE@Ic,Vce): 60@5mA,10V
Collector Cut-Off Current (Icbo): 500nA
Collector-Emitter Breakdown Voltage (Vceo): 50V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 250mV@300uA,10mA
Package: SC-59
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Power - Max: 338mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SC-59
Base Part Number: MUN22
detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 338mW Surface Mount SC-59