BCW65ALT1G دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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BCW65ALT1G
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حجم فایل
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74.873
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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4
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi BCW65ALT1G
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Transistor Type:
NPN
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Operating Temperature:
-55°C~+150°C@(Tj)
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Collector Current (Ic):
800mA
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Power Dissipation (Pd):
225mW
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Transition Frequency (fT):
100MHz
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DC Current Gain (hFE@Ic,Vce):
100@100mA,1V
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Collector Cut-Off Current (Icbo):
20nA
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Collector-Emitter Breakdown Voltage (Vceo):
32V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
700mV@50mA,500mA
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Package:
SOT-23-3
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Tape & Reel (TR)
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Part Status:
Obsolete
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Current - Collector (Ic) (Max):
800mA
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Voltage - Collector Emitter Breakdown (Max):
32V
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Vce Saturation (Max) @ Ib, Ic:
700mV @ 50mA, 500mA
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Current - Collector Cutoff (Max):
20nA
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DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 100mA, 1V
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Power - Max:
225mW
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Frequency - Transition:
100MHz
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Mounting Type:
Surface Mount
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Package / Case:
TO-236-3, SC-59, SOT-23-3
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Supplier Device Package:
SOT-23-3 (TO-236)
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Base Part Number:
BCW65
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detail:
Bipolar (BJT) Transistor NPN 32V 800mA 100MHz 225mW Surface Mount SOT-23-3 (TO-236)
