دیتاشیت BC556ATA
مشخصات دیتاشیت
| نام دیتاشیت |
BC556ATA
|
| حجم فایل |
70.016
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
10
|
مشخصات فنی
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
onsemi BC556ATA
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Transistor Type:
PNP
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Operating Temperature:
+150°C@(Tj)
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Collector Current (Ic):
100mA
-
Power Dissipation (Pd):
500mW
-
Transition Frequency (fT):
150MHz
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DC Current Gain (hFE@Ic,Vce):
110@2mA,5V
-
Collector Cut-Off Current (Icbo):
15nA
-
Collector-Emitter Breakdown Voltage (Vceo):
65V
-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
250mV@100mA,5mA
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Package:
TO-92-3
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Manufacturer:
onsemi
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Series:
-
-
Packaging:
Cut Tape (CT)
-
Part Status:
Active
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Current - Collector (Ic) (Max):
100mA
-
Voltage - Collector Emitter Breakdown (Max):
65V
-
Vce Saturation (Max) @ Ib, Ic:
650mV @ 5mA, 100mA
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Current - Collector Cutoff (Max):
15nA (ICBO)
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
110 @ 2mA, 5V
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Power - Max:
500mW
-
Frequency - Transition:
150MHz
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Mounting Type:
Through Hole
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Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
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Supplier Device Package:
TO-92-3
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Base Part Number:
BC556
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detail:
Bipolar (BJT) Transistor PNP 65V 100mA 150MHz 500mW Through Hole TO-92-3
