MJL4281AG دیتاشیت

MJL4281AG

مشخصات دیتاشیت

نام دیتاشیت MJL4281AG
حجم فایل 87.577 کیلوبایت
نوع فایل pdf
تعداد صفحات 6

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سایر مستندات

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: onsemi MJL4281AG
  • Transistor Type: NPN
  • Operating Temperature: -65°C~+150°C@(Tj)
  • Collector Current (Ic): 15A
  • Power Dissipation (Pd): 230W
  • Transition Frequency (fT): 35MHz
  • DC Current Gain (hFE@Ic,Vce): 80@5A,5V
  • Collector Cut-Off Current (Icbo): 50uA
  • Collector-Emitter Breakdown Voltage (Vceo): 350V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1V@8A,800mA
  • Package: TO-264-3
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Tube
  • Part Status: Active
  • Current - Collector (Ic) (Max): 15A
  • Voltage - Collector Emitter Breakdown (Max): 350V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 800mA, 8A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5A, 5V
  • Power - Max: 230W
  • Frequency - Transition: 35MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264
  • Base Part Number: MJL42
  • detail: Bipolar (BJT) Transistor NPN 350V 15A 35MHz 230W Through Hole TO-264

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