MJ4502G دیتاشیت

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مشاهده دیتاشیت MJ4502G	دانلود دیتاشیت

MJ4502 4 pages

RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: onsemi MJ4502G
Transistor Type: PNP
Operating Temperature: -65°C~+200°C@(Tj)
Collector Current (Ic): 30A
Power Dissipation (Pd): 200W
Transition Frequency (fT): 2MHz
DC Current Gain (hFE@Ic,Vce): 25@7.5A,2V
Collector Cut-Off Current (Icbo): 1mA
Collector-Emitter Breakdown Voltage (Vceo): 90V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 800mV@7.5A,750mA
Package: TO-204
Manufacturer: onsemi
Series: -
Packaging: Tray
Part Status: Active
Current - Collector (Ic) (Max): 30A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 800mV @ 750mA, 7.5A
Current - Collector Cutoff (Max): 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 7.5A, 2V
Power - Max: 200W
Frequency - Transition: 2MHz
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204 (TO-3)
Base Part Number: MJ450
detail: Bipolar (BJT) Transistor PNP 100V 30A 2MHz 200W Through Hole TO-204 (TO-3)