دیتاشیت FDP045N10A-F102
مشخصات دیتاشیت
| نام دیتاشیت | FDP045N10A-F102 |
|---|---|
| حجم فایل | 70.016 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 12 |
دانلود دیتاشیت FDP045N10A-F102 |
FDP045N10A-F102 Datasheet |
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مشخصات
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi FDP045N10A-F102
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 263W
- Total Gate Charge (Qg@Vgs): 74nC@10V
- Drain Source Voltage (Vdss): 100V
- Input Capacitance (Ciss@Vds): 5270pF@50V
- Continuous Drain Current (Id): 120A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 4.5mΩ@10V,100A
- Package: TO-220
- Manufacturer: onsemi
- Series: PowerTrench®
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5270pF @ 50V
- FET Feature: -
- Power Dissipation (Max): 263W (Tc)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
- Base Part Number: FDP045
- detail: N-Channel 100V 120A (Tc) 263W (Tc) Through Hole TO-220-3
