MMBTA28 دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت MMBTA28	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/Darlington Transistors
Datasheet: onsemi MMBTA28
Transistor Type: NPN
Operating Temperature: -55°C~+150°C@(Tj)
Collector Current (Ic): 800mA
Power Dissipation (Pd): 350mW
Transition frequency (fT): 125MHz
DC current gain (hFE@Vce,Ic): 10000@5V,100mA
Collector-emitter voltage (Vceo): 80V
Collector cut-off current (Icbo@Vcb): 500nA
Collector-emitter saturation voltage (VCE(sat)@Ic,Ib): 1.5V@100mA,100uA
Package: SSOT-3
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Power - Max: 350mW
Frequency - Transition: 125MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: 3-SSOT
Base Part Number: MMBTA28
detail: Bipolar (BJT) Transistor NPN - Darlington 80V 800mA 125MHz 350mW Surface Mount 3-SSOT