NTMS4807NR2G دیتاشیت

NTMS4807NR2G

مشخصات دیتاشیت

نام دیتاشیت NTMS4807NR2G
حجم فایل 97.842 کیلوبایت
نوع فایل pdf
تعداد صفحات 5

مشاهده دیتاشیت NTMS4807NR2G

دانلود دیتاشیت

سایر مستندات

NTMS4807N 6 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi NTMS4807NR2G
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 860mW
  • Total Gate Charge (Qg@Vgs): 24nC@4.5V
  • Drain Source Voltage (Vdss): 30V
  • Input Capacitance (Ciss@Vds): 2900pF@24V
  • Continuous Drain Current (Id): 14.8A
  • Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 6.1mΩ@10V,14.8A
  • Package: SOIC-8
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 6.1mOhm @ 14.8A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 24V
  • FET Feature: -
  • Power Dissipation (Max): 860mW (Ta)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Base Part Number: NTMS48
  • detail: N-Channel 30V 9.1A (Ta) 860mW (Ta) Surface Mount 8-SOIC

محصولات مشابه