FCMT299N60 دیتاشیت

FCMT299N60

مشخصات دیتاشیت

نام دیتاشیت FCMT299N60
حجم فایل 70.016 کیلوبایت
نوع فایل pdf
تعداد صفحات 11

مشاهده دیتاشیت FCMT299N60

دانلود دیتاشیت

سایر مستندات

FCMT299N60 11 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FCMT299N60
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 125W
  • Total Gate Charge (Qg@Vgs): 51nC@10V
  • Drain Source Voltage (Vdss): 600V
  • Input Capacitance (Ciss@Vds): 1948pF@380V
  • Continuous Drain Current (Id): 12A
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 299mΩ@10V,6A
  • Package: Power-88
  • Manufacturer: onsemi
  • Series: SuperFET® II
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1948pF @ 380V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Power88
  • Package / Case: 4-PowerTSFN
  • Base Part Number: FCMT299
  • detail: N-Channel 600V 12A (Ta) 125W (Tc) Surface Mount Power88

محصولات مشابه