NTMD4820NR2G دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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NTMD4820N
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حجم فایل
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124.226
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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6
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مشخصات فنی
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RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi NTMD4820NR2G
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
1.28W
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Total Gate Charge (Qg@Vgs):
7.7nC@4.5V
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Drain Source Voltage (Vdss):
30V
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Input Capacitance (Ciss@Vds):
940pF@15V
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Continuous Drain Current (Id):
6.4A
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Gate Threshold Voltage (Vgs(th)@Id):
3V@250uA
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Reverse Transfer Capacitance (Crss@Vds):
125pF@15V
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Drain Source On Resistance (RDS(on)@Vgs,Id):
15mΩ@10V,7.5A
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Package:
SOP-8
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
2 N-Channel (Dual)
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FET Feature:
Logic Level Gate
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Drain to Source Voltage (Vdss):
30V
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Current - Continuous Drain (Id) @ 25°C:
4.9A
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Rds On (Max) @ Id, Vgs:
20mOhm @ 7.5A, 10V
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Vgs(th) (Max) @ Id:
3V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
7.7nC @ 4.5V
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Input Capacitance (Ciss) (Max) @ Vds:
940pF @ 15V
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Power - Max:
750mW
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Mounting Type:
Surface Mount
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Package / Case:
8-SOIC (0.154", 3.90mm Width)
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Supplier Device Package:
8-SOIC
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Base Part Number:
NTMD48
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detail:
Mosfet Array 2 N-Channel (Dual) 30V 4.9A 750mW Surface Mount 8-SOIC
