SMMBTA14LT1G دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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onsemi SMMBTA13LT1G
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حجم فایل
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85.542
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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7
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Darlington Transistors
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Datasheet:
onsemi SMMBTA14LT1G
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Transistor Type:
NPN
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Operating Temperature:
-55°C~+150°C@(Tj)
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Collector Current (Ic):
300mA
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Power Dissipation (Pd):
225mW
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Transition frequency (fT):
125MHz
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DC current gain (hFE@Vce,Ic):
20000@5V,100mA
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Collector-emitter voltage (Vceo):
30V
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Collector cut-off current (Icbo@Vcb):
100nA
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Collector-emitter saturation voltage (VCE(sat)@Ic,Ib):
1.5V@100mA,100uA
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Package:
SOT-23-3
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Obsolete
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Current - Collector (Ic) (Max):
1.2A
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Voltage - Collector Emitter Breakdown (Max):
30V
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Vce Saturation (Max) @ Ib, Ic:
1.5V @ 100µA, 100mA
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Current - Collector Cutoff (Max):
100nA (ICBO)
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DC Current Gain (hFE) (Min) @ Ic, Vce:
20000 @ 100mA, 5V
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Power - Max:
350mW
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Frequency - Transition:
125MHz
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Mounting Type:
Surface Mount
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Package / Case:
TO-236-3, SC-59, SOT-23-3
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Supplier Device Package:
SOT-23-3
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Base Part Number:
MMBTA14
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detail:
Bipolar (BJT) Transistor NPN - Darlington 30V 1.2A 125MHz 350mW Surface Mount SOT-23-3
