HUF75344G3 دیتاشیت

HUF75344G3

مشخصات دیتاشیت

نام دیتاشیت HUF75344G3
حجم فایل 62.526 کیلوبایت
نوع فایل pdf
تعداد صفحات 10

مشاهده دیتاشیت HUF75344G3-Isee

دانلود دیتاشیت

سایر مستندات

HUF75344G3,P3 10 pages

HUF75344G3 11 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi HUF75344G3
  • Power Dissipation (Pd): 285W
  • Drain Source Voltage (Vdss): 55V
  • Continuous Drain Current (Id): 75A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 8mΩ@10V,75A
  • Package: TO-247
  • Manufacturer: onsemi
  • Series: UltraFET™
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 210nC @ 20V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 285W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3
  • Base Part Number: HUF75
  • detail: N-Channel 55V 75A (Tc) 285W (Tc) Through Hole TO-247-3

محصولات مشابه