دیتاشیت BMS3003-1E
مشخصات دیتاشیت
نام دیتاشیت |
BMS3003
|
حجم فایل |
264.687
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
5
|
مشخصات
-
Manufacturer:
ON Semiconductor
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Series:
-
-
Packaging:
Tube
-
Part Status:
Active
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FET Type:
P-Channel
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Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
60V
-
Current - Continuous Drain (Id) @ 25°C:
78A (Ta)
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Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
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Rds On (Max) @ Id, Vgs:
6.5mOhm @ 39A, 10V
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Vgs(th) (Max) @ Id:
-
-
Gate Charge (Qg) (Max) @ Vgs:
285nC @ 10V
-
Vgs (Max):
±20V
-
Input Capacitance (Ciss) (Max) @ Vds:
13200pF @ 20V
-
FET Feature:
-
-
Power Dissipation (Max):
2W (Ta), 40W (Tc)
-
Operating Temperature:
-55°C ~ 150°C (TJ)
-
Mounting Type:
Through Hole
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Supplier Device Package:
TO-220F-3SG
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Package / Case:
TO-220-3 Full Pack
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Base Part Number:
BMS30
-
detail:
P-Channel 60V 78A (Ta) 2W (Ta), 40W (Tc) Through Hole TO-220F-3SG