دیتاشیت MJL21194G
مشخصات دیتاشیت
نام دیتاشیت |
MJL21193, 94
|
حجم فایل |
119.3
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
6
|
مشخصات
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi MJL21194G
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Transistor Type:
NPN
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Operating Temperature:
-65°C~+150°C@(Tj)
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Collector Current (Ic):
16A
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Power Dissipation (Pd):
200W
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Transition Frequency (fT):
4MHz
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DC Current Gain (hFE@Ic,Vce):
25@8A,5V
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Collector Cut-Off Current (Icbo):
100uA
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Collector-Emitter Breakdown Voltage (Vceo):
250V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
4V@16A,3.2A
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Package:
TO-264-3
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Tube
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Part Status:
Active
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Current - Collector (Ic) (Max):
16A
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Voltage - Collector Emitter Breakdown (Max):
250V
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Vce Saturation (Max) @ Ib, Ic:
4V @ 3.2A, 16A
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Current - Collector Cutoff (Max):
100µA
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DC Current Gain (hFE) (Min) @ Ic, Vce:
25 @ 8A, 5V
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Power - Max:
200W
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Frequency - Transition:
4MHz
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Mounting Type:
Through Hole
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Package / Case:
TO-264-3, TO-264AA
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Supplier Device Package:
TO-264
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Base Part Number:
MJL21
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detail:
Bipolar (BJT) Transistor NPN 250V 16A 4MHz 200W Through Hole TO-264