دیتاشیت 2N4403TAR
مشخصات دیتاشیت
| نام دیتاشیت |
2N4403
|
| حجم فایل |
404.702
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
12
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi 2N4403TAR
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Transistor Type:
PNP
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Operating Temperature:
-55°C~+150°C@(Tj)
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Collector Current (Ic):
600mA
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Power Dissipation (Pd):
625mW
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Transition Frequency (fT):
200MHz
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DC Current Gain (hFE@Ic,Vce):
100@150mA,2V
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Collector Cut-Off Current (Icbo):
-
-
Collector-Emitter Breakdown Voltage (Vceo):
40V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
750mV@500mA,50mA
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Package:
TO-92-3
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Manufacturer:
onsemi
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Series:
-
-
Packaging:
Cut Tape (CT)
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Part Status:
Active
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Current - Collector (Ic) (Max):
600mA
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Voltage - Collector Emitter Breakdown (Max):
40V
-
Vce Saturation (Max) @ Ib, Ic:
750mV @ 50mA, 500mA
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Current - Collector Cutoff (Max):
-
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 2V
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Power - Max:
625mW
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Frequency - Transition:
200MHz
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Mounting Type:
Through Hole
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Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
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Supplier Device Package:
TO-92-3
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Base Part Number:
2N4403
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detail:
Bipolar (BJT) Transistor PNP 40V 600mA 200MHz 625mW Through Hole TO-92-3
