FGB40T65SPD-F085 دیتاشیت

FGB40T65SPD-F085

مشخصات دیتاشیت

نام دیتاشیت FGB40T65SPD-F085
حجم فایل 67.551 کیلوبایت
نوع فایل pdf
تعداد صفحات 10

مشاهده دیتاشیت FGB40T65SPD-F085-Isee

دانلود دیتاشیت

سایر مستندات

FGB40T65SPD_F085 9 pages

مشخصات فنی

  • RoHS: true
  • Type: Trench Field Stop
  • Category: Triode/MOS Tube/Transistor/IGBTs
  • Datasheet: onsemi FGB40T65SPD-F085
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Collector Current (Ic): 80A
  • Power Dissipation (Pd): 267W
  • Input Capacitance (Cies@Vce): -
  • Turn?on Switching Loss (Eon): 0.97mJ
  • Pulsed Collector Current (Icm): 120A
  • Turn?off Switching Loss (Eoff): 0.28mJ
  • Diode Reverse Recovery Time (Trr): 34ns
  • Collector-Emitter Breakdown Voltage (Vces): 650V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): -
  • Package: D2PAK-3
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 267W
  • Switching Energy: 970µJ (on), 280µJ (off)
  • Input Type: Standard
  • Gate Charge: 36nC
  • Td (on/off) @ 25°C: 18ns/35ns
  • Test Condition: 400V, 40A, 6Ohm, 15V
  • Reverse Recovery Time (trr): 34ns
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D²PAK)
  • Base Part Number: FGB4
  • detail: IGBT Trench Field Stop 650V 80A 267W Surface Mount TO-263AB (D²PAK)

محصولات مشابه