30A02CH-TL-E دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
30A02CH-TL-E
|
|
حجم فایل
|
52.286
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
6
|
مشخصات فنی
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
onsemi 30A02CH-TL-E
-
Transistor Type:
PNP
-
Operating Temperature:
+150°C@(Tj)
-
Collector Current (Ic):
700mA
-
Power Dissipation (Pd):
700mW
-
Transition Frequency (fT):
520MHz
-
DC Current Gain (hFE@Ic,Vce):
200@10mA,2V
-
Collector Cut-Off Current (Icbo):
100nA
-
Collector-Emitter Breakdown Voltage (Vceo):
30V
-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
110mV@200mA,10mA
-
Package:
SOT-23
-
Manufacturer:
onsemi
-
Series:
-
-
Packaging:
Cut Tape (CT)
-
Part Status:
Active
-
Current - Collector (Ic) (Max):
700mA
-
Voltage - Collector Emitter Breakdown (Max):
30V
-
Vce Saturation (Max) @ Ib, Ic:
220mV @ 10mA, 200mA
-
Current - Collector Cutoff (Max):
100nA (ICBO)
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 10mA, 2V
-
Power - Max:
700mW
-
Frequency - Transition:
520MHz
-
Mounting Type:
Surface Mount
-
Package / Case:
SC-96
-
Supplier Device Package:
3-CPH
-
Base Part Number:
30A02
-
detail:
Bipolar (BJT) Transistor PNP 30V 700mA 520MHz 700mW Surface Mount 3-CPH
