BSP16T1G دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت BSP16T1G	دانلود دیتاشیت

BSP16T1 3 pages

RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: onsemi BSP16T1G
Transistor Type: PNP
Operating Temperature: -65°C~+150°C@(Tj)
Collector Current (Ic): 100mA
Power Dissipation (Pd): 1.5W
Transition Frequency (fT): 15MHz
DC Current Gain (hFE@Ic,Vce): 30@50mA,10V
Collector Cut-Off Current (Icbo): 50uA
Collector-Emitter Breakdown Voltage (Vceo): 300V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 2V@50mA,5mA
Package: SOT-223-4
Manufacturer: onsemi
Series: -
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Power - Max: 1.5W
Frequency - Transition: 15MHz
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Base Part Number: BSP16
detail: Bipolar (BJT) Transistor PNP 300V 100mA 15MHz 1.5W Surface Mount SOT-223