NTZS3151PT1G دیتاشیت

NTZS3151PT1G

مشخصات دیتاشیت

نام دیتاشیت NTZS3151PT1G
حجم فایل 85.665 کیلوبایت
نوع فایل pdf
تعداد صفحات 5

مشاهده دیتاشیت NTZS3151PT1G

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سایر مستندات

NTZS3151P 5 pages

مشخصات فنی

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi NTZS3151PT1G
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 170mW
  • Total Gate Charge (Qg@Vgs): 5.6nC@4.5V
  • Drain Source Voltage (Vdss): 20V
  • Input Capacitance (Ciss@Vds): 458pF@16V
  • Continuous Drain Current (Id): 860mA
  • Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 150mΩ@4.5V,900mA
  • Package: SOT-563
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 860mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 16V
  • FET Feature: -
  • Power Dissipation (Max): 170mW (Ta)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-563
  • Package / Case: SOT-563, SOT-666
  • Base Part Number: NTZS3151
  • detail: P-Channel 20V 860mA (Ta) 170mW (Ta) Surface Mount SOT-563

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