دیتاشیت 2SA1416S-TD-E
مشخصات دیتاشیت
نام دیتاشیت | 2SA1416/2SC3646 |
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حجم فایل | 361.153 کیلوبایت |
نوع فایل | |
تعداد صفحات | 7 |
دانلود دیتاشیت 2SA1416/2SC3646 |
2SA1416/2SC3646 Datasheet |
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مشخصات
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: onsemi 2SA1416S-TD-E
- Transistor Type: PNP
- Collector Current (Ic): 1A
- Power Dissipation (Pd): 500mW
- Transition Frequency (fT): 120MHz
- DC Current Gain (hFE@Ic,Vce): 100@100mA,5V
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 100V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 400mV@40mA,400mA
- Package: SOT-89
- Manufacturer: onsemi
- Series: -
- Packaging: Cut Tape (CT)
- Part Status: Active
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 100V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: 500mW
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PCP
- Base Part Number: 2SA1416
- detail: Bipolar (BJT) Transistor PNP 100V 1A 120MHz 500mW Surface Mount PCP