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MPS751-D26Z Datasheet
Datasheet specifications
| Datasheet's name | MPS751 |
|---|---|
| File size | 63.596 KB |
| File type | |
| Number of pages | 3 |
Download Datasheet MPS751 |
Download Datasheet |
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Other documentations
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Technical specifications
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: onsemi MPS751-D26Z
- Transistor Type: PNP
- Operating Temperature: +150°C@(Tj)
- Collector Current (Ic): 2A
- Power Dissipation (Pd): 625mW
- Transition Frequency (fT): 75MHz
- DC Current Gain (hFE@Ic,Vce): 40@2A,2V
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 60V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 300mV@1A,100mA
- Package: TO-92-3
- Manufacturer: onsemi
- Series: -
- Packaging: Cut Tape (CT)
- Part Status: Active
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 2V
- Power - Max: 625mW
- Frequency - Transition: 75MHz
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package: TO-92-3
- Base Part Number: MPS751
- detail: Bipolar (BJT) Transistor PNP 60V 2A 75MHz 625mW Through Hole TO-92-3