دیتاشیت CPH6443-TL-W
مشخصات دیتاشیت
| نام دیتاشیت |
CPH6443
|
| حجم فایل |
688.201
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
5
|
مشخصات
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
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Power Dissipation (Pd):
1.6W
-
Total Gate Charge (Qg@Vgs):
10nC@10V
-
Drain Source Voltage (Vdss):
35V
-
Input Capacitance (Ciss@Vds):
470pF@20V
-
Continuous Drain Current (Id):
6A
-
Gate Threshold Voltage (Vgs(th)@Id):
2.6V@1mA
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
37mΩ@3A,10V
-
Package:
SOT-23-6
-
Manufacturer:
onsemi
-
Series:
-
-
Packaging:
Cut Tape (CT)
-
Part Status:
Active
-
FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
35V
-
Current - Continuous Drain (Id) @ 25°C:
6A (Ta)
-
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
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Rds On (Max) @ Id, Vgs:
37mOhm @ 3A, 10V
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Vgs(th) (Max) @ Id:
2.6V @ 1mA
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Gate Charge (Qg) (Max) @ Vgs:
10nC @ 10V
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Vgs (Max):
±20V
-
Input Capacitance (Ciss) (Max) @ Vds:
470pF @ 20V
-
FET Feature:
-
-
Power Dissipation (Max):
1.6W (Ta)
-
Operating Temperature:
150°C (TJ)
-
Mounting Type:
Surface Mount
-
Supplier Device Package:
6-CPH
-
Package / Case:
SOT-23-6 Thin, TSOT-23-6
-
Base Part Number:
CPH644
-
detail:
N-Channel 35V 6A (Ta) 1.6W (Ta) Surface Mount 6-CPH
