CPH6443-TL-W Datasheet

CPH6443

Datasheet specifications

Datasheet's name CPH6443
File size 688.201 KB
File type pdf
Number of pages 5

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Technical specifications

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Power Dissipation (Pd): 1.6W
  • Total Gate Charge (Qg@Vgs): 10nC@10V
  • Drain Source Voltage (Vdss): 35V
  • Input Capacitance (Ciss@Vds): 470pF@20V
  • Continuous Drain Current (Id): 6A
  • Gate Threshold Voltage (Vgs(th)@Id): 2.6V@1mA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 37mΩ@3A,10V
  • Package: SOT-23-6
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 35V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Rds On (Max) @ Id, Vgs: 37mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 20V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-CPH
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Base Part Number: CPH644
  • detail: N-Channel 35V 6A (Ta) 1.6W (Ta) Surface Mount 6-CPH

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