NVJS4151P دیتاشیت

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مشاهده دیتاشیت NVJS4151P	دانلود دیتاشیت

RoHS: true
Type: P Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi NVJS4151PT1G
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 1.2W
Total Gate Charge (Qg@Vgs): 10nC@4.5V
Input Capacitance (Ciss@Vds): 850pF@10V
Continuous Drain Current (Id): 3.2A
Gate Threshold Voltage (Vgs(th)@Id): 1.2V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 67mΩ@2.9A,4.5V
Package: SOT-363-6(SC-70-6)
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Rds On (Max) @ Id, Vgs: 67mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
FET Feature: -
Power Dissipation (Max): 1.2W (Ta)
Mounting Type: Surface Mount
Supplier Device Package: SC-88/SC70-6/SOT-363
Package / Case: 6-TSSOP, SC-88, SOT-363
Base Part Number: NVJS41
detail: P-Channel 20V 3.2A (Ta) 1.2W (Ta) Surface Mount SC-88/SC70-6/SOT-363