FDME1023PZT دیتاشیت

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مشاهده دیتاشیت FDME1023PZT	دانلود دیتاشیت

RoHS: true
Type: 2 P-Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi FDME1023PZT
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 600mW
Total Gate Charge (Qg@Vgs): 7.7nC@4.5V
Drain Source Voltage (Vdss): 20V
Input Capacitance (Ciss@Vds): 405pF@10V
Continuous Drain Current (Id): 2.6A
Gate Threshold Voltage (Vgs(th)@Id): 1V@250uA
Reverse Transfer Capacitance (Crss@Vds): 50pF@10V
Drain Source On Resistance (RDS(on)@Vgs,Id): 95mΩ@4.5V,2.3A
Package: MicroFET(1.6x1.6)
Manufacturer: onsemi
Series: PowerTrench®
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Rds On (Max) @ Id, Vgs: 142mOhm @ 2.3A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V
Power - Max: 600mW
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Supplier Device Package: 6-MicroFET (1.6x1.6)
Base Part Number: FDME10
detail: Mosfet Array 2 P-Channel (Dual) 20V 2.6A 600mW Surface Mount 6-MicroFET (1.6x1.6)