NSV60600MZ4T1G دیتاشیت

مشخصات دیتاشیت

دانلود دیتاشیت NSV60600MZ4T1G	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: onsemi NSV60600MZ4T1G
Transistor Type: PNP
Operating Temperature: -55°C~+150°C@(Tj)
Collector Current (Ic): 6A
Power Dissipation (Pd): 2W
Transition Frequency (fT): 100MHz
DC Current Gain (hFE@Ic,Vce): 120@1A,2V
Collector Cut-Off Current (Icbo): 100nA
Collector-Emitter Breakdown Voltage (Vceo): 60V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 100mV@2A,200mA
Package: SOT-223-4
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
Current - Collector (Ic) (Max): 6A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 350mV @ 600mA, 6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Power - Max: 800mW
Frequency - Transition: 100MHz
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223-3
Base Part Number: NSV606
detail: Bipolar (BJT) Transistor PNP 60V 6A 100MHz 800mW Surface Mount SOT-223-3