NSV1C200MZ4T1G دیتاشیت

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دانلود دیتاشیت NSV1C200MZ4T1G	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: onsemi NSV1C200MZ4T1G
Transistor Type: PNP
Operating Temperature: -55°C~+150°C@(Tj)
Collector Current (Ic): 2A
Power Dissipation (Pd): 800mW
Transition Frequency (fT): 120MHz
DC Current Gain (hFE@Ic,Vce): 120@500mA,2V
Collector Cut-Off Current (Icbo): 100nA
Collector-Emitter Breakdown Voltage (Vceo): 100V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 220mV@200mA,2A
Package: SOT-223
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 220mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Power - Max: 800mW
Frequency - Transition: 120MHz
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Base Part Number: NSV1C2
detail: Bipolar (BJT) Transistor PNP 100V 2A 120MHz 800mW Surface Mount SOT-223